The below post is related to an archived discussion
Hello there!
As said in the title, and in relation with the above unanswered article, I am also trying to model an electron beam induced current inside a silicon thin layer (1um). With high energy, the electrons hit the bulk, creating e-/h+ pairs. Those are drifted apart by two means; the internal doping, and the applied bias (which naturally creates a current, also). The total current is the the applied one, plus the one induced by the incoming electrons.
The problem is that I can't seem to find a multiphysics node coupling the (cpt) node with the (semi) node. Is there another way to do it? With a mathematical event node?
Please find my file attached. Don't hesitate to ask questions if something is not clear about it.
Jon