i am trying to simulate a photo diode using semiconductor module and electromagnetic , frequency domain (wave optics) but i am facing following problems (1) whenever i am trying to define[used defined ] stimulated generation rate more then 1x 18 [1/m^3-s]. in optical transition option.. simulation stopped [results not converging] and if i am using already defined options like spontaneous life time, kan model. etc then. also generation rate inside photo diode is not more then 1e19[1/m3-s] for input power of 1e-11 W[area =10x 10um^].. ans as per theoretical calculation it should ne 1e 25[1/m^3-s]... is there any limitation?
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