Consideration of defect in PIN photodiode

Hi there,

Now I am trying to simulate P-I-N photodiode using semiconductor & wave-optics module. Firstly, I am trying to understand and modify an example file "GaAs PIN photodiode" in the example library. But, in my understand, this example cannot compute some dark current component like 'trap assisted tunneling current', 'trap assisted generation / recombination' which is related to defect states. How can I modify "GaAs PIN photodiode" example to include the effects related to defect states? Could anyone help me ?

Thank you in advance.