Hi! I am using comsol to run a simulation for a silicon-based mems capacitive force sensor.
I have included the solid mechanics and electrostatic physics to solve for a stationary study.
I am using an auxiliary sweep, with continuation from the last paramter, to alter the loaded force and calculate the membrane deformation and overall capacitive change.
The problem I am facing is that different force loadings in the sweep ended up returning the same results (same membrane deformation and capacitance change).
This happens normally only at the last few large forces of the sweep, but when I included a thermal expansion (318K with 298K reference) for both the linear elastic and hyperelastic (neo-hookean) material, the problem will occur even at extremely small loading forces.
I am unsure what steps can be taken to resolve this issue.
Thank you very much! ML