Hi,
I'm kind of new to COMSOL and I'm trying to model the laser induced heating of a silicon wafer. I've looked at the laser heating tutorial given by COMSOL but I'm more interested in the conduction along the depth of the wafer not the surface distribution. I'm modeling a phase change in the silicon with the absortion coefficient that suddenly goes up really fast as we reach the melting temperature and stays constant past it.
The pulsed laser is modeled by a heat source at the surface z=0 that is gaussian in the xy plane, follows the beer-lambert law along the z axis and it's power is gaussian in time (1 pulse).
I know from experiments that the temperature should rise pretty high but it barely changes if not at all. I have tried to change the mesh, the boundary boundary conditions but nothing seems to work.
I've attached the file.
Thank you.